Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1500680 | Scripta Materialia | 2009 | 4 Pages |
Abstract
Indium oxide and tin-doped indium oxide amorphous films grown by pulsed reactive magnetron sputtering were annealed in vacuum. The film structure and properties were studied using in situ X-ray diffraction, spectroscopic ellipsometry, elastic recoil detection analysis and four-point probe measurements. The electrical properties of the indium oxide film change mainly before the onset of crystallization outset. In contrast, the crystallization of tin-doped indium oxide caused a decrease in resistivity due to Sn donor activation with an estimated efficiency of 40%.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A. Rogozin, M. Vinnichenko, N. Shevchenko, U. Kreissig, A. Kolitsch, W. Möller,