| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500716 | Scripta Materialia | 2009 | 4 Pages |
Abstract
We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O2 gas mixture. Nodules are present when sputtered at 1.8 W cm−2. Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film’s resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
K.C. Aw, Z. Tsakadze, A. Lohani, S. Mhaisalkar,