| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500898 | Scripta Materialia | 2010 | 4 Pages |
Abstract
We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using the standard theory of scattering in metal wires, and the observed resistivity values are consistent with the infinite average grain size.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
J.W. Lee, M.G. Kang, B.-S. Kim, B.H. Hong, D. Whang, S.W. Hwang,