| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1500929 | Scripta Materialia | 2010 | 4 Pages |
Abstract
The study of the close relationship between crack propagation and domain switching is of extreme importance in the reliability of PbZr1−xTixO3 (PZT) devices. We performed domain imaging in the neighbourhood of indentation cracks on poled and non-poled PZT bulk specimens using polarized micro-Raman spectroscopy. Non-destructive Raman measurements helped to correlate the indentation-induced domain texture with the crack growth resistance on both samples. Hence, polarized micro-Raman spectroscopy offers the potential to locally investigate regions of interest in complex piezoelectric devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Marco Deluca, Raúl Bermejo, Hannes Grünbichler, Volker Presser, Robert Danzer, Klaus G. Nickel,