Atomic resolution improvement by a new method using the second derivative of the intensity function of the reconstructed exit wave of electrons for a thin β-Si3N4 crystal

This report is an extension of a high-resolution transmission electron microscopy study of β-Si3N4 [0 0 0 1] by Ziegler et al. (2002) [1]. The aim of this work was to obtain a better structural image showing complete resolution of the 95 pm spacing for Si-N dumb-bells. This goal has been achieved with a new method using the second derivative of the intensity function of the reconstructed exit wave. The structure of this thin specimen showed an asymmetric aspect, deviating slightly from a hexagonal lattice.