Article ID Journal Published Year Pages File Type
1501140 Scripta Materialia 2008 4 Pages PDF
Abstract

The epitaxial growth of ZnO nanowires over ZnO thin film deposited on silicon substrates was carried out using a modified thermal evaporation method. The precursor, which consisted of 10–30 wt.% zinc nitrate loaded over activated carbon, was prepared specifically for this study. The loading amount of zinc nitrate was varied to control the length and diameter of the ZnO nanowires. X-ray diffraction patterns confirmed that the ZnO nanowires grown on the silicon substrates were composed of typical single-crystalline ZnO. The single-crystal ZnO nanowires synthesized in this study were also studied by photoluminescence spectroscopy, and emitted intense blue UV light at around 380 nm.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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