Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1501140 | Scripta Materialia | 2008 | 4 Pages |
Abstract
The epitaxial growth of ZnO nanowires over ZnO thin film deposited on silicon substrates was carried out using a modified thermal evaporation method. The precursor, which consisted of 10–30 wt.% zinc nitrate loaded over activated carbon, was prepared specifically for this study. The loading amount of zinc nitrate was varied to control the length and diameter of the ZnO nanowires. X-ray diffraction patterns confirmed that the ZnO nanowires grown on the silicon substrates were composed of typical single-crystalline ZnO. The single-crystal ZnO nanowires synthesized in this study were also studied by photoluminescence spectroscopy, and emitted intense blue UV light at around 380 nm.
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Physical Sciences and Engineering
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Authors
No-Kuk Park, You Jin Lee, Suk Hoon Yoon, Gi Bo Han, Si Ok Ryu, Tae Jin Lee, Won Gun Lee, Young Je Bae,