| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1501329 | Scripta Materialia | 2010 | 4 Pages |
Abstract
The formation of Ni silicide alloyed with Pt has been analyzed by atom probe tomography. A 300 °C/1 h anneal results in simultaneous growth of the NiSi and Ni2Si phases: the Ni2Si phase is a continuous layer with columnar grains, while the NiSi phase forms a discontinuous layer. Direct evidence of Pt diffusion short-circuits via Ni2Si grain boundaries is shown. The presence of Pt in the grains and interphase boundaries may explain the change in the Ni silicide formation for the Ni(5% Pt)/Si system.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Dominique Mangelinck, Khalid Hoummada, Alain Portavoce, Carine Perrin, Rachid Daineche, Marion Descoins, David J. Larson, Peter H. Clifton,