Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1501362 | Scripta Materialia | 2009 | 4 Pages |
Abstract
Nanoscale Al precipitates with satellite-like outgrowths have been observed in eutectic Si particles in Al–Si–Mg alloys. Investigation by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy indicates that the outgrowth is a void in the aluminium. The void interface plane in the Al crystal is {1 1 1} and is parallel with {0 0 1} Si. It is very likely that the outgrowth is related to the precipitation of Al in the Si particles and to the stability of the Al precipitates.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Z.H. Jia, L. Arnberg, S.J. Andersen, J.C. Walmsley,