Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1501385 | Scripta Materialia | 2010 | 4 Pages |
Abstract
A scanning transmission electron microscope diffraction technique was used to determine the local orientation of copper grains in 120 nm copper interconnect (CI) lines. These grains exhibit a <1 1 0> normal orientation while the <1¯12> and the <11¯1> type orientations are present along the length and width of the CI line, respectively. Stresses, as high as 625 MPa, are present at the copper/diffusion barrier triple junctions that in conjunction with large stress gradients may induce stress-induced void formation upon thermal cycling.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
K.J. Ganesh, S. Rajasekhara, J.P. Zhou, P.J. Ferreira,