Article ID Journal Published Year Pages File Type
1501418 Scripta Materialia 2007 4 Pages PDF
Abstract

A series of wide band gap semiconductors, CuAlS2+x, with a chalcopyrite structure were synthesized in bulk form by spark plasma sintering. p-type conductions for all samples were confirmed by positive Seebeck and Hall coefficients. For excess S introduced into the system, the carrier concentration was highly enhanced, reaching 6.9 × 1019 cm−3 for the 10% doped sample, which results in a high conductivity of 4.6 S cm−1 without decreasing the bang gap.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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