Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1501418 | Scripta Materialia | 2007 | 4 Pages |
Abstract
A series of wide band gap semiconductors, CuAlS2+x, with a chalcopyrite structure were synthesized in bulk form by spark plasma sintering. p-type conductions for all samples were confirmed by positive Seebeck and Hall coefficients. For excess S introduced into the system, the carrier concentration was highly enhanced, reaching 6.9 × 1019 cm−3 for the 10% doped sample, which results in a high conductivity of 4.6 S cm−1 without decreasing the bang gap.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Min-Ling Liu, Yao-Ming Wang, Fu-Qiang Huang, Li-Dong Chen, Wen-Deng Wang,