Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1501443 | Scripta Materialia | 2008 | 4 Pages |
Abstract
The crystallization of Ge–Sb–Te and Si–Sb–Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si–Sb–Te and Ge–Sb–Te crystallize via different processes. Si–Sb–Te has a complex structure (mainly hexagonal) while Ge–Sb–Te has a simple face-centered cubic structure when annealed at 433 K for several hours.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ting Zhang, Yan Cheng, Zhitang Song, Bo Liu, Songlin Feng, Xiaodong Han, Ze Zhang, Bomy Chen,