Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

The crystallization of Ge–Sb–Te and Si–Sb–Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si–Sb–Te and Ge–Sb–Te crystallize via different processes. Si–Sb–Te has a complex structure (mainly hexagonal) while Ge–Sb–Te has a simple face-centered cubic structure when annealed at 433 K for several hours.