| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1501560 | Scripta Materialia | 2009 | 4 Pages |
Abstract
This work presents a photodiode with a p-ZnO/oxide/n-Si structure in a magnetic field. Placing such a p-ZnO/oxide/n-Si structure photodiode in a strong magnetic field increased the total current under illumination by approximately one order of magnitude, mainly because the magnetic field induced a photocurrent by magneto-optical multiplication effects. In the magnetic field, the absorption tail of the responsivity was shifted from 371 to 370 nm, and a blue shift of around 9.03 meV was observed. This shift is caused by Landau splitting.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Lung-Chien Chen, Mo-Inn Lu,