| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1502003 | Scripta Materialia | 2007 | 4 Pages |
Abstract
An accelerated L10 ordering process was observed in FePt thin films deposited directly on HF-cleaned Si substrates at low annealing temperatures as compared with those deposited on nature-oxidized Si substrates, which results from an interface reaction that forms PtSi between the FePt film and the Si substrate. The L10 ordered FePt thin films prepared after 360 °C annealing show a large coercivity of Hc = 8.9 kOe and an excellent stability against thermal annealing.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xiaohong Li, Baoting Liu, Feng Li, Hongyu Sun, Wei Li, Cuizhuo Yang, Xiangyi Zhang,