| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1502039 | Scripta Materialia | 2006 | 5 Pages |
Abstract
A little explored relationship between the structural and electrical properties of radio frequency sputtered AlN films is studied as a function of nitrogen concentration. It is found that the grain growth mechanism is responsible for an improvement of structural properties and a degradation of electrical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
J.P. Kar, G. Bose, S. Tuli,