Oxidation behavior of zirconium diboride–silicon carbide at 1800 °C

ZrB2-based ultrahigh-temperature ceramics, including 20 and 30 vol.% SiC, have been investigated at 1800 °C under different oxygen partial pressures. ZrB2–30 vol.% SiC exhibited the highest oxidation resistance under high oxygen partial pressure, whereas it displayed the lowest oxidation resistance under low oxygen partial pressure. The thickness of the oxide scale of ZrB2 containing either 20 or 30 vol.% SiC increased with decreasing oxygen partial pressure. Moreover, this trend was intensified by increasing the SiC content.