Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502163 | Scripta Materialia | 2007 | 4 Pages |
Abstract
In the early stage of the Sn/Ni–7 wt.%V reaction at 200 °C, solid state amorphization reaction occurs and an amorphous T phase layer is formed. After 48 h of reaction, a Ni3Sn4 phase layer is formed between Sn and the T phase, and the reaction path is Ni–V/T/Ni3Sn4/Sn. Periodic layers, Ni–V/T/Ni3Sn4/T/Ni3Sn4/Sn, are found in the couples after 72 h of reaction. The reliability assessment of the flip chip product using Ni–V barrier needs to be evaluated based on the results in the Sn/Ni–7 wt.%V couples.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Sinn-wen Chen, Chih-chi Chen, Chih-horng Chang,