Direct observation of potential barrier behavior in yttrium–barium titanate observed by electrostactic force microscopy

Electrostatic force microscopy (EFM) was used to directly probe, and thereby characterize, both the surface morphology and surface potential of semiconducting barium titanate doped with yttrium. The potential barrier developed at the grain boundaries was determined using EFM with in situ applied voltage up to 8 V. The applied voltage was mapped and the distribution of potential across the sample showed changes in regions that matched the grain boundaries, displaying a constant barrier width of 145.2 nm.