Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502284 | Scripta Materialia | 2006 | 4 Pages |
Abstract
The crystallisation of amorphous germanium in contact with aluminium was studied in Ge/Al layer systems by employing in situ and ex situ X-ray diffraction methods. Comparing Ge/Al and Si/Al systems, totally different crystallisation behaviours were observed. Amorphous Ge in contact with Al shows an “explosive” crystallisation at temperatures as low as 150 °C, whereas amorphous Si exhibits a gradual crystallisation accompanied by a simultaneous layer exchange between Si and Al layers. The observations have been interpreted on a thermodynamic basis.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Z.M. Wang, J.Y. Wang, L.P.H. Jeurgens, E.J. Mittemeijer,