Article ID Journal Published Year Pages File Type
1502284 Scripta Materialia 2006 4 Pages PDF
Abstract

The crystallisation of amorphous germanium in contact with aluminium was studied in Ge/Al layer systems by employing in situ and ex situ X-ray diffraction methods. Comparing Ge/Al and Si/Al systems, totally different crystallisation behaviours were observed. Amorphous Ge in contact with Al shows an “explosive” crystallisation at temperatures as low as 150 °C, whereas amorphous Si exhibits a gradual crystallisation accompanied by a simultaneous layer exchange between Si and Al layers. The observations have been interpreted on a thermodynamic basis.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Authors
, , , ,