Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502343 | Scripta Materialia | 2008 | 5 Pages |
Abstract
Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo. We believe that the mechanism of thin-film silicon fatigue is “reaction-layer fatigue”, involving cyclic stress-induced thickening of the oxide and moisture-assisted cracking within this layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
D.H. Alsem, C.L. Muhlstein, E.A. Stach, R.O. Ritchie,