Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502346 | Scripta Materialia | 2008 | 5 Pages |
Abstract
The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon–germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ann Witvrouw,