| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1502386 | Scripta Materialia | 2006 | 4 Pages |
Abstract
Temperature dependence of the first-order Raman scattering in silicon nanowires was studied using an amended phonon confinement model. The experimental band position and linewidth both showed a better agreement with the calculated data if the temperature effect was considered. Furthermore, a slight improvement in crystal quality was observed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Junjie Niu, Jian Sha, Deren Yang,