Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502413 | Scripta Materialia | 2006 | 4 Pages |
Abstract
A new approach based on the concept of curvature-driven migration of grain boundaries in the presence of particle distribution has been used to study the abnormal grain growth of Goss grains in silicon steels. The morphological aspect of the abnormal growth is considered by the introduction of the limit radius of neighbourhood. This critical radius is able to explain the presence of island grains observed inside the growing Goss grain. These island grains are formed as a result of large neighbouring grain resistance.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
N. Maazi, N. Rouag, A.L. Etter, R. Penelle, T. Baudin,