Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1502465 | Scripta Materialia | 2008 | 4 Pages |
Abstract
Highly crystallized V2O5 hollow microspheres were prepared by a self-assembly method and successfully doped with Cu. X-ray diffraction, Fourier-transform infrared spectrometry, scanning electron microscopy, transmission electron microscopy, cyclic voltammetry and galvanostatic cell cycling were employed to characterize the samples. The V2O5 hollow microspheres had a high capacity of 319 mAh g−1 in the potential region 4.0–2.0 V. The Cu-doped V2O5 microspheres exhibited better cycling performance due to their stabilized structure and increased conductivity.
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Authors
D. Zhu, H. Liu, L. Lv, Y.D. Yao, W.Z. Yang,