Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3–6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%.