| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1502762 | Scripta Materialia | 2008 | 4 Pages |
Abstract
Tantalum-doped indium tin oxide films were deposited by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (4 0 0) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Tantalum-doping also revealed better optical–electrical properties and a larger optical band gap. Carrier concentration was increased by tantalum-doping, which had an important influence on optical–electrical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Bo Zhang, Xianping Dong, Xiaofeng Xu, Jiansheng Wu,