Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films

Highly transparent conductive and near-infrared (IR) reflective Ga-doped ZnO films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of post-annealing temperature on the structural, electrical and optical properties of the films was investigated. The lowest resistivity of 2.6 × 10−4 Ω cm was obtained at an annealing temperature of 450 °C. The films have low transmittance and high reflectance in the near-IR range. The average transmittance of the films is over 90% in the visible range.