| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1503306 | Scripta Materialia | 2007 | 4 Pages |
Abstract
This paper reports on a unique crystallization phenomenon of amorphous plasma-enhanced chemical vapour deposited SiNx thin films induced by heating to temperatures ⩾1148 K in air. The crystallization occurs as randomly scattered pits, within which clusters of smaller crystals form. The crystals formed are free of oxygen and are identified to be α-Si3N4. The crystallization is associated with a large volume contraction, which results in internal cracking.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Neerushana Jehanathan, Martin Saunders, Yinong Liu, John Dell,