| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1503461 | Scripta Materialia | 2007 | 4 Pages |
Abstract
The structural and photoluminescent (PL) properties of Zn2(1âx)MnxSiO4 (1 ⩽ x⩽ 5) thin film phosphors grown using a pulsed laser deposition technique have been investigated. The effect of systematic variation of oxygen partial pressures (O2 pp) (100, 300, 500 and 700 mTorr) during the growth of these thin films has been studied. Thin film grown on silicon substrate at 750 °C and in situ annealed in 300 mTorr of O2 pp exhibits superior PL property; ex situ annealing at higher temperatures improves the PL intensity.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
P. Thiyagarajan, M. Kottaisamy, M.S. Ramachandra Rao,