| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1503473 | Scripta Materialia | 2006 | 4 Pages |
Abstract
The luminescence properties of GaN quantum dots (QDs) were characterized by cathodoluminescence (CL) at room temperature via spectroscopy and monochromatic imaging. The correlations between CL results and the QD geometry measured by atomic force microscopy (AFM) were discussed considering the quantum confinement and built-in electric field in the GaN QDs. We demonstrated that CL characterizations supply abundant information about a QD system, e.g. the exciton diffusion length and the ratio of radiative recombination efficiency in the wetting layer and QDs.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yongzhao Yao, Takashi Sekiguchi, Yoshiki Sakuma, Makoto Miyamura, Yasuhiko Arakawa,