| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1504818 | Solid State Sciences | 2012 | 6 Pages |
A high concentration of Li (up to LiB5.8; 18 Li/cell) was doped into β-rhombohedral boron (β-B), which has a crystalline structure built up from B12 icosahedral clusters, by sealing the raw materials in a stainless-steel tube. The relation between the structure and the electronic properties was clarified and a self-compensation property of Li- or Mg-doped β-B was discussed. The Li concentration was analyzed by atomic absorption spectrometry. The changes in the structure and the electronic properties were investigated by X-ray diffraction using the Rietveld method and by electrical conductivity measurements, respectively. Li occupies the A1, D, E and F sites, and the occupancies of the B sites (B13, B16 and B4) decrease with increasing Li doping. In Li- or Mg-doped β-B, electron doping is compensated by the removal of interstitial B atoms at the B16 site and by the generation of vacancies at the B13 and B4 sites. There have been no reports of self-compensation in other crystalline elemental semiconductors.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► There is no report of self-compensation in the other crystalline elemental semiconductors. ► A high concentration of Li (18 Li/cell) was doped into β-rhombohedral boron. ► The electron doping is firstly compensated by the removal of interstitial B atoms. ► The electron doping is secondly compensated by the generation of vacancies.
