Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1504898 | Solid State Sciences | 2013 | 6 Pages |
Abstract
A low-voltage pentacene field-effect transistor with sol–gel derived SiO2 gate dielectric was fabricated. The mobility of the transistor was achieved as high as 1.526 cm2/V on the bared SiO2/Si substrate by a higher dielectric constant. The interface state density for the transistor was found to vary from 3.8 × 1010 to 7.5 × 1010 eV−1 cm−2 at frequency range of 100 kHz–1 MHz. It is evaluated that the SiO2 derived by low cost sol–gel is quite a promising candidate as a gate dielectric layer for low-voltage pentacene field-effect transistor.
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Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
M. Cavas, Ahmed A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantawy, F. Yakuphanoglu,