| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1505021 | Solid State Sciences | 2011 | 6 Pages |
The effect of 12 MeV energy (3 × 1012 e−/cm2 fluency) electron irradiation on Au/Aniline Blue(AB)/n-Si/Al rectifying device has been studied in terms of the current–voltage (I–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I–V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation.
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