| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1505112 | Solid State Sciences | 2011 | 5 Pages |
The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► ZnSe films were deposited by cost effective vacuum deposition method. ► The peak photo-response was observed at 460 nm. ► Photocurrent increased with the increase in substrate temperature and also after annealing. ► Both rise and decay times decreased with increase in substrate temperature and also after annealing. ► The optimum conditions for obtaining high photocurrent and fast photo-response have been determined.
