| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1505116 | Solid State Sciences | 2011 | 5 Pages |
Abstract
⺠The phase change characteristics of HfO2 doping on GeTe in application for phase change memory were studied. ⺠The incorporation of HfO2 can improve the thermal stability of amorphous GeTe film. ⺠The GeTe-HfO2-based phase change memory exhibits lower power consumption than widely used Ge2Sb2Te5-based one.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yegang Lu, Sannian Song, Zhitang Song, Wanchun Ren, Cheng Peng, Yan Cheng, Bo Liu,