| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1505297 | Solid State Sciences | 2012 | 5 Pages |
Abstract
⺠We show that the ion implanted channel LDMOS transistor needs a special modeling. ⺠We present a physically based model which considers ion implantation effects. ⺠This model employs a set of surface potential based equations. ⺠Our results show that the model accurately predicts behavior of the proposed structure.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Mahdi Ghasemi Shirvan, Morteza Fathipour,