Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1505424 | Solid State Sciences | 2011 | 7 Pages |
Abstract
We explore the excitation profile of a repulsive impurity doped quantum dot induced by linear and non-linear drift of the dopant location. We have considered Gaussian impurity centers. The investigation reveals the roles subtly played by the region of influence of the dopant in conjunction with the mode of dopant propagation to modulate the excitation pattern. The investigation also reveals a change in the relative dominance of various factors in influencing the excitation rate associated with a change in the mode of dopant shift.
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Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Nirmal Kumar Datta, Kashinath Chatterjee, Manas Ghosh,