Interpretation of metallic and semiconducting temperature dependent resistivity of La0.91Rb0.06Mn0.94O3 manganites

The present paper focuses on a quantitative analysis of the metallic and semiconducting behavior of electrical resistivity in La0.91Rb0.06Mn0.94O3 manganites. The contribution of inherent low-frequency acoustic phonons as well as high-frequency optical phonons, to the electron–phonon resistivity is estimated following Bloch–Gruneisen model. The computed phonon resistivity is compared with that of reported metallic resistivity, accordingly ρdiff. = [ρexp. − {ρ0 + ρe-ph (=ρac + ρop)}] have been analysed through electron-electron scattering. Also, the difference can be varies linearly with T4.5 in accordance with the electron–magnon scattering in the double exchange process. The results reveal important aspects transport mechanism as well as point out that it is not only dominated by electron–phonon scattering, but also by electron–electron and electron–magnon scattering process. Alternatively, in high temperature regime (T > TP) the semiconducting nature is discussed with Mott’s variable range hopping (VRH) and small polaron conduction (SPC) model.

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