Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1506677 | Solid State Sciences | 2007 | 7 Pages |
Abstract
The experimentally observed temperature dependent resistivity of double layered La2â2xCa1+2xMn2O7 manganite was analyzed with the theoretically simulated temperature dependence of resistivity curves based on nearest neighbour hopping, Efros-Shklovskii variable range hopping, and Mott's 2D and 3D variable range hopping models. From the analysis of these results, Mott's 3D variable range hopping mechanism seemed to be most suitable mechanism describing the semiconducting behaviour of these double layered manganites. Temperature dependent activation energy also supported the Mott's 3D variable range hopping model.
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Authors
Ajai K. Gupta, Vijay Kumar, Neeraj Khare,