Synthesis of single phase cubic tin nitride nanoparticles by atmospheric pressure–halide vapor phase epitaxy

In this work tin nitride nanoparticles having controlled size have been synthesized by halide vapor phase epitaxy at atmospheric pressure. Tin nitride nanoparticles having three different sizes: 3 ± 0.5 nm, 6 ± 1.0 nm and 11 ± 1.5 nm have been synthesized simultaneously in a single batch at different substrate temperatures by placing the substrate at different distances from the source. The depositions have been carried out on gold-coated silicon substrates using SnCl4·5H2O as the precursor, NH3 as the nitrogen supplier and N2 as the carrier gas. This is the first report on the synthesis of tin nitride in nanoparticle form.

Graphical abstractIn this work tin nitride nanoparticles having controlled size have been synthesized by halide vapor phase epitaxy at atmospheric pressure. Tin nitride nanoparticles having three different sizes: 3 ± 0.5 nm, 6 ± 1.0 nm and 11 ± 1.5 nm have been synthesized simultaneously in a single batch at different substrate temperatures by placing the substrate at different distances from the source.Figure optionsDownload full-size imageDownload as PowerPoint slide