Performance of electronic switching circuits based on bipolar power transistors at low temperature

► Several electrical parameters of the bipolar power transistor of the type MJE13007 were affected due to operation on such very low temperature range, e.g. the current gain hFE which decreases significantly. ► A pronounced decrease was observed in the capacitances of the collector-base and emitter-base junctions' value due to temperature decrease. ► It is shown that the rise- and fall-times of the proposed transistor switch were shown to be improved ► This work suggests that power bipolar transistors are potentially attractive candidates for future low temperature switching system applications.