Significant aspects of minority-carrier injection in dynamic-threshold SOI MOSFET at low-temperature

This paper demonstrates significant aspects of low-temperature minority-carrier injection in n-channel dynamic-threshold (DT) MOSFET having various silicon-on-insulator (SOI) layer thicknesses. Drain current vs. gate voltage and gate current vs. gate voltage characteristics are evaluated at temperatures ranging from 300 K to 30 K, and minority-carrier injection is characterized. Impacts of temperature, channel length, and silicon-on-insulator layer thickness on opposite drain current behavior are discussed by examining transconductance behavior.