Optical control of low frequency noise behavior in cryogenic GaAs junction field effect transistor

We demonstrated optical control of low frequency noise in n-type GaAs junction field effect transistors (JFETs) at cryogenic temperature. At 4.2 K, a 6 dB decrease and a 10 dB increase in noise at 1 Hz were observed when the JFET (band gap: 1.51 eV) was illuminated by light with wavelengths of 1650 and 1550 nm, respectively, for a drain voltage of 0.5 V and drain current of 0.25 μA. On the other hand, the wavelength with the noise reduction effect decreased to 1550 nm at 30 K. These results mean the trap charges at an energy level of approximately 0.75 ± 0.1 eV affect the carrier tunnel probability and the behavior of the low frequency noise.