Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1509210 | Energy Procedia | 2015 | 8 Pages |
Abstract
The structure and the luminescence properties of neodymium- and terbium-doped SnO2 thin films were investigated by using x-ray diffraction and electron microscopy, infrared absorption, Raman and photoluminescence (PL) spectroscopies. The films were obtained by evaporation of SnO2 and rare earths (RE) on silicon substrates maintained at 100 °C. The as-deposited films were sub-stoichiometric and the films were then annealed in air at different temperatures. The structural characterization shows that the rutile phase is obtained for annealing temperatures greater than 600 °C. In this phase, photoluminescence experiments show that the rare-earth ions are optically activated.
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