| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1509214 | Energy Procedia | 2015 | 7 Pages |
Abstract
A material composed of GaTe and ZnTe crystallites with average diameter of ∼ 37 nm and 68 nm respectively was obtained by heat treatment at the temperature of 1000K and 1073K of GaTe plates in Zn vapour for 24 hours. The absorbance spectra of composite material obtained at 1073K and that calculated from diffuse reflection using the Kubelka-Munk formula contains the bands characteristic for light absorption in ZnTe and GaTe crystallites. The photoluminescence spectrum of composite material at the temperature of 80K is composed to the excitonic band in GaTe and impurity bands of ZnTe crystallites.
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