A Comparison Study of n-type PERT and IBC Cell Concepts with Screen Printed Contacts

In this work we conducted a comparison study of our n-type PERT (BiSoN) and IBC (ZEBRA) cell technologies. We investigated the effect of material quality and base resistivity on the performance and efficiency potential of the two device architectures. We observed only a slight efficiency variation (less than 3%relative) for wafer bulk lifetimes ranging from 1.2-6.5 ms and base resistivities from 2-9 Ωcm, with no significant difference between the n-PERT andthe IBC concept. We achieved cell efficiencies, as high as 20.4% for BiSoN concept and 21.5% for ZEBRA on 15.6×15.6 cm2 n-type Cz Si wafers. Additionally, we demonstrated that both cell concepts have a high bifacial performance, both at cell and module level.