Inline Optical CVD for Silicon Deposition at Low Temperature and Atmospheric Pressure

This manuscript describes and presents results obtained with an inline optical CVD system operating at low temperature (<1100K) and at atmospheric pressure. Nanocrystalline silicon layers were grown on top of a moving (>10 mm/min) compressed silicon powder substrate. The deposition parameters, together with the silicon powder substrate feature, provide a solution for a contamination free layer to be detached and used as a pre-ribbon for solar cell formation. 15 cm long nanocrystalline silicon pre-ribbon samples were grown at a speed of 10 mm/min with depositionrates up to 90 μm/min.