| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1511408 | Energy Procedia | 2014 | 7 Pages |
Abstract
Tungsten oxide is deposited by atomic layer deposition (ALD) using tungsten hexacarbonyl [W(CO)6] and ozone [O3]. Growth characteristic is studied in detail by in-situ quartz crystal microbalance (QCM). A narrow temperature window is observed with a saturated growth rate of 0.21 Å per ALD cycle. In-situ Fourier transform infrared (FTIR) vibration spectroscopy investigation is performed to determine the surface chemistry during each ALD half cycle under linear growth regime. X-ray photo electron spectroscopy confirms the deposit presence and chemical nature of tungsten and oxygen in the as-deposited WO3 film. The as deposited films are found amorphous which crystalized to monoclinic WO3 upon annealing.
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