Design and Simulation of Cd1-xZnxTe Thin Films Epitaxied on CdTe Substrate for Photovoltaic Devices Applications

This work concerns the study and the simulation of a structure containing II-VI semiconductor for photovoltaic application. We studied the influence of the zinc concentration on the various parameters of the alloy Cd1-xZnxTe epitaxied on a CdTe substrate. Indeed, the insertion of zinc increases the band gap of the alloy, which is not ideal to absorb the maximum of the solar spectrum, but for low concentrations of zinc the Cd1-xZnxTe ternary material becomes attractive in the photovoltaic field. We have shown that for a Zinc composition (x) = 5%, the band gap is 1.52 eV. And if x = 20%, the gap is 1.62 eV.Our simulation studies have demonstrated that by an introduction of a specific Zinc concentration, we successfully simulated the achieving of 19% efficiency for solar devices.