| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1512284 | Energy Procedia | 2013 | 4 Pages |
Abstract
A numerical model for a vertical-aligned nanowire (NW) radial p-i-n junction-based photovoltaic (PV) device is presented. The fill factor, the power conversion efficiency, the optimum device length, radius and doping level are calculated using a simulator built on the commercial package Comsol Multiphysics only. The sensitivity of the Si nanowire to temperature variations is also investigated. The results are found to be in accordance with the available experimental measurements.
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Physical Sciences and Engineering
Energy
Energy (General)
