Charge Carrier Lifetime Shift Induced by Temperature Variation during a MWPCD Measurement

In this work the temperature of a silicon sample excited by a laser during a time dependent microwave-detected photoconductance decay (MWPCD) measurement was logged. 2 °C temperature increase on the backside of the wafer was observed. Temperature dependent charge carrier lifetime calculations using the determined temperature characteristic are compared to time dependent MWPCD measurements of a boron-doped wafer with high oxygen content. The time duration to reach the final temperature fits well with the time scale of the fast forming recombination center of the boron-oxygen related defect. Charge carrier lifetime variation due to temperature increase is discussed in view of different defect parameters.